PTB-Seminar on VUV and EUV Metrology 2025

Session

Session 6

15 Oct 2025, 13:50

Lecture Hall in Hermann-von-Helmholtz Building (PTB Berlin)

24. High-Resolution, High-Efficiency Spectrometers in the EUV and Soft X-ray Range

Jürgen Probst (NOB Nano Optics Berlin GmbH)

15/10/2025, 13:50

oral

Reflection zone plates (RZPs), an innovative class of 2-D varied line space gratings that combine dispersion, one- or two-dimensional focusing and reflection in one element [1], are good candidates to provide optimized efficiency at high energy resolution. Conventional RZPs on planar substrates suffer from a narrow energy range in parallel spectra registration, limiting the applications of...

33. A lab-scale EUV high intensity exposure setup for small-spot exposures and angular resolved photoelectron spectroscopy

Linus Nagel (RWTH)

15/10/2025, 14:10

oral

The extreme ultraviolet high intensity exposure (EUV-HIEX) setup is a compact tool for irradiation of samples with high EUV doses designed to achieve maximum intensity within a small spot size in the sample plane. Applications can be found in the field of accelerated lifetime studies where the EUV-material interaction is investigated. Further applications are EUV induced outgassing studies and...

4. CD SEM measurements on EUV photomasks

Torben Heins

15/10/2025, 14:30

oral

The continuous scaling of semiconductor devices has driven the adoption of Extreme Ultraviolet (EUV) lithography in advanced nodes. The precision and accuracy of Critical Dimension (CD) measurements on EUV masks become increasingly critical.
A particular challenge in CD measurement on EUV masks is to minimize the influence of the linearity of the CD-SEM on the measurement results. Especially...

14. High throughput AFM metrology for high-NA EUV lithography

Po Cheng Wu

15/10/2025, 14:50

oral

The semiconductor industry has continued its push on scaling with the use of multi-patterning while in parallel introducing 3D transistor architectures and advanced packaging to achieve higher transistor density and performance gains. High-NA EUV lithography machines are expected to provide relief from multi-patterning translating to fewer process steps and increased yield. However, the use of...