The broadband plasma patterned wafer defect inspection systems enable wafer-level discovery of yield-critical defects and inline monitoring for advanced logic and leading-edge memory design nodes. We will address the application of optical wafer inspection and its image capture methodology, including difference image generation, sub-resolution sensitivity and speed. We will introduce the...
Transition metals are key constituents of EUV optical elements. Most transition metals have high melting points and are compatible with Ion Beam Deposition (IBD) alongside magnetron sputtering techniques. These techniques allow coating dense, very smooth and pure thin films. Metals are used as main coatings and also as secondary layers such as capping layers and interdiffusion barriers. The...
Extending ellipsometry to the vacuum-ultraviolet spectral region, i.e., photon energies larger than 6.5 eV, is not only demanding in terms of the instrumentation but also with regard to the mathematical modelling of the measured data in order to obtain a physical interpretation in terms of the dielectric function or the optical constants of a material. In particular the extreme surface...
