Speaker
Description
This work investigates the potential benefits of employing combined s- and p-polarized extreme ultraviolet (EUV) reflectometry for the accurate and efficient determination of thin film optical constants and geometrical parameters. EUV reflectometry (EUVR) is a powerful non-destructive technique for characterizing thin films, which is crucial for advancements in fields such as lithography and nanotechnology.
Our study compares three distinct data analysis approaches: utilizing s-polarized, p-polarized, and a simultaneous combination of both s- and p-polarized EUV data. Through iterative calculations, we observe that while s-polarized data can yield reliable results, convergence speed is often an issue. Analysis of p-polarized data alone appears to offer increased sensitivities and, in some instances, can accelerate the convergence.
The most promising results are achieved when combine s- and p-polarized EUVR data simultaneously. This combined approach appears to lead to a faster convergence rate including reduced uncertainities.
Our findings suggest that the simultaneous utilization of s- and p-polarized EUVR data could offer an effective methodology for rapid, robust, and accurate thin film characterization.
