PTB-Seminar on VUV and EUV Metrology 2025

Session

Session 3

14 Oct 2025, 16:20

Lecture Hall in Hermann-von-Helmholtz Building (PTB Berlin)

29. High speed optical inspection of wafers

Dr Larissa Juschkin (KLA Corporation)

14/10/2025, 16:20

oral

The broadband plasma patterned wafer defect inspection systems enable wafer-level discovery of yield-critical defects and inline monitoring for advanced logic and leading-edge memory design nodes. We will address the application of optical wafer inspection and its image capture methodology, including difference image generation, sub-resolution sensitivity and speed. We will introduce the...

9. Updated Optical Data for Transition Metals in the EUV Range

Qais Saadeh (Physikalisch-Technische Bundesanstalt (PTB))

14/10/2025, 16:50

oral

Transition metals are key constituents of EUV optical elements. Most transition metals have high melting points and are compatible with Ion Beam Deposition (IBD) alongside magnetron sputtering techniques. These techniques allow coating dense, very smooth and pure thin films. Metals are used as main coatings and also as secondary layers such as capping layers and interdiffusion barriers. The...

41. Dimensional and analytical metrology of semiconductor nanostructures employing X-ray fluorescence techniques

Dr Philipp Hönicke

14/10/2025, 17:10

oral

The rapid advancements in nanoelectronics have led to a profound increase in the complexity of three-dimensional nanostructures utilized in cutting-edge transistor architectures. As this complexity grows, the demand for precise metrology becomes paramount to ensure successful fabrication. X-ray fluorescence techniques, when employed in specific operational modes, emerge as a valuable tool,...

30. VUV-Ellipsometry on graphene on Ge(111)

Mattia Mulazzi (PTB, Abteilung 7.1)

14/10/2025, 17:30

oral

Extending ellipsometry to the vacuum-ultraviolet spectral region, i.e., photon energies larger than 6.5 eV, is not only demanding in terms of the instrumentation but also with regard to the mathematical modelling of the measured data in order to obtain a physical interpretation in terms of the dielectric function or the optical constants of a material. In particular the extreme surface...

28. Influence of the model selection in analysis of EUV reflectometry data

Sven Glabisch (RWTH Aachen University)

oral

Many materials remain insufficient studied in the extreme ultraviolet (EUV) regime, where optical constants often deviate from literature values, as they are usually calculated based on older measurements of atomic scattering factors. When this literature data is used as a basis for optics design, it can cause critical discrepancies between expected and real performance. In optical metrology,...